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t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 1 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com p ad configuration p ad no. symbol 1 rf in 2 v g 3 rf out, v d applications ? commercial and military ra dar ? communication s ? electronic warfare general description triquints tga2237 is a wide b and distributed a mplifier fabricated on triquint s production 0.25um gan on sic process . the tga2237 operates from 0. 03 C 2.5 ghz and provides 1 0 w of saturated output power with 13 db of large signal gain and greater than 52 % power - added efficiency. t he broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. the tg a2237 is fully matched to 50? at both rf ports allowing for simple system integration. dc blocks are required on both rf ports and the drain voltage must be injected through an off chip bias - tee on the rf output port . lead - free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description tga2 2 37 ear99 0.03 C 2.5 ghz 1 0 w gan power amplifier product features ? frequency range: 0.03 C 2.5 ghz ? p sat : 4 0 dbm at p in = 27dbm ? p1db: > 3 2 dbm ? pae : > 52 % ? large signal gain: 13 db ? small signal gain: 19 db ? im3 @ 120ma p out < 3 3 dbm/tone: - 30dbc ? im5 @ 120ma p out < 3 3 dbm/tone: - 30 dbc ? bias : v d = 30 v , i dq = 360 ma , v g = - 2. 5 v typical ? wideband flat power ? chip dimensions: 2.4 x 1.8 x 0.10 mm functional block diagram 1 3 2 j1 rf in j2 rf out
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 2 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0v gate voltage range (v g ) - 8 to 0v drain current (i d ) 135 0 ma gate current (i g ) - 2.4 to 8.4 ma power dissipation (p diss ) , 85c 19w input power (p in ) , cw, 50, 85c, 33 dbm input power (p in ) , cw, vswr 10 :1, v d = 30 v, 85c 3 0 dbm channel t emperature (t ch ) 275c mounting temperature (30 seconds) 320c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 30 v drain current (i d q ) 360 m a drain current under rf drive (i d _drive ) 660 ma gate voltage (v g ) - 2.5 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 30 v, i d q = 360 m a, v g = - 2.5 v typical parameter min typical max units operational frequency range 0. 03 2.5 ghz small signal gain 19 db input return loss > 1 0 db output return loss > 12 db output power (pin = 27 dbm) 4 0 db m power added efficiency (pin = 27 dbm) > 52 % power @ 1db compression (p1db) > 32 db im3 @ 120ma p out /tone < 3 3 dbm - 30 dbc im5 @ 120ma p out /tone < 3 3 dbm - 30 dbc small signal gain temperature coefficient - 0.0 2 db/ c output power temperature coefficient - 0.00 2 dbm/ c recommended operating voltage: 25 30 32 v
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 3 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d = 3 0 v , i d q = 360ma 10 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 3 0 v , i d _drive = 633 ma , p out = 40dbm , p diss = 9 w 1 75 c median lifetime (t m ) 1.3 x 10^7 hrs notes: 1. thermal resistance measured to back of carrier plate. mmic mounted on 40 mils cumo (80/20) carrier using 1.5 mil ausn. median lifetime test conditions: v d = 40 v; failure criteria = 10% reduction in i d _max 1 e+ 04 1e+05 1e+06 1 e+ 07 1 e+ 08 1e+09 1e+10 1 e+ 11 1e+12 1 e+ 13 1e+14 1 e+ 15 1e+16 1 e+ 17 1 e+ 18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 4 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 10) typical performance 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 30 v, i dq = 360ma 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. v d 25v 28v 30v 32v temp. = +25 c i dq = 360ma 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. i d 120ma 240ma 360ma temp. = +25 c v d = 30v -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 30 v, i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 30 v, i dq = 360ma
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 5 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 10 ) 30 32 34 36 38 40 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 27dbm temp. = +25 c i dq = 360ma 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=25v vd=28v vd=30v vd=32v p in = 27dbm temp. = +25 c i dq = 360ma 30 32 34 36 38 40 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power 24dbm 25dbm 26dbm 27dbm temp. = +25 c v d = 30v, i dq = 360ma 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power 24dbm 25dbm 26dbm 27dbm temp. = +25 c v d = 30v, i dq = 360ma 30 32 34 36 38 40 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 30v, i dq = 360ma 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 27dbm v d = 30v, i dq = 360ma
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 6 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 10) 100 200 300 400 500 600 700 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 30v, i dq = 360ma 0 3 6 9 12 15 18 0 0.5 1 1.5 2 2.5 3 3.5 4 gain(db) frequency (ghz) power gain vs. freq vs. input power 24dbm 25dbm 26dbm 27dbm temp. = +25 c v d = 30v, i dq = 360ma 18 22 26 30 34 38 42 0 4 8 12 16 20 24 28 p out (dbm) input power (dbm) output power vs. input power vs. freq. 0.1ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 30v, i dq = 360ma 0 12 24 36 48 60 72 0 4 8 12 16 20 24 28 pae (%) input power (dbm) pae vs. input power vs. freq. 0.1ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 30v, i dq = 360ma 100 200 300 400 500 600 700 0 4 8 12 16 20 24 28 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 0.1ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 30v, i dq = 360ma 9 12 15 18 21 24 27 0 4 8 12 16 20 24 28 gain (db) input power (dbm) power gain vs. input power vs. freq. 0.1ghz 1.0ghz 2.0ghz 3.0ghz temp. = +25 c v d = 30v, i dq = 360ma
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 7 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 10) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq v d = 30v, 2.0ghz, 1mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq v d = 30v, 2.0ghz, 1mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 30v, i dq = 360ma, 2.0ghz, 1mhz tone spacing - 40 c +25 c +85 c -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temperature v d = 30v, i dq = 360ma, 2.0ghz, 1mhz tone spacing - 40 c +25 c +85 c -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 30v, i dq = 360ma, 1mhz tone spacing temp. = +25 c 1.0ghz 2.0ghz 3.0ghz 0.1ghz -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 30v, i dq = 360ma, 1mhz tone spacing temp. = +25 c 2.0ghz 1.0ghz 0.1ghz 3.0ghz
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 8 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 10) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 30v, i dq = 360ma temp. = +25 c 2.0ghz 1.0ghz 0.5ghz 3.0ghz -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 30v, i dq = 360ma temp. = +25 c 2.0ghz 1.0ghz 0.5ghz 3.0ghz -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. temp. freq. = 2.0ghz +85 c +25 c - 40 c v d = 30v, i dq = 360ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. temp. freq. = 2.0ghz +85 c +25 c - 40 c v d = 30v, i dq = 360ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. v d /i d . freq. = 2.0ghz temp. = +25 c 30v360ma 30v120ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. v d /i d . freq. = 2.0ghz temp. = +25 c 30v360ma 30v120ma
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 9 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots below reflect performance measured between external bias tee and on - board bias tee ( see application circuit on pages 10 and 1 2 ) 30 32 34 36 38 40 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power external bias-t on-board bias-t temp. = +25 c v d = 30v, i dq = 360ma p in = 27dbm 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power external bias-t on-board bias-t temp. = +25 c v d = 30v, i dq = 360ma p in = 27dbm
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 10 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. coaxial input dc block (c4 ) is used for input port (rf in.) 2. external wide bandwidth b ias - t ee is used for output port (rf out). v d is applied through the o utput bias - tee . application circuit ( coaxial input dc block and coaxial output bias tee ) bias - up procedure 1. set i d limit to 70 0ma, i g limit to 5ma 2. set v g to - 5.0v 3 . set v d +30 v 4 . adjust v g more positive until i dq = 360ma (v g ~ - 2.5 v typical) 5 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5.0v. ensure i dq ~ 0ma 3 . set v d to 0v 4 . turn off v d supply 5 . turn off v g supply
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 11 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing (coaxial input dc block and coaxial output bias tee) bill of materials reference design value description manufacturer part number c1 1000pf slc, 50v various c 2 0.01 uf cap, 0402 , 50v, 10%, x 7 r various c 3 10 uf cap, 1206 , 50v, 10%, x 7 r various c 4 dc block various r1 C r 2 10? res, 0402 various
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 12 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note: 1. performance of the mmic with surface mount dc blocks and bias tee components may be degraded relative to the coaxial option. these components should be optimize d for the desired operational band width . application circuit (option with board - level dc blocks and o utput b ias t ee )
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 13 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout w ith on - b oard dc b locks and o utput bia s - t option bill of materials for on - board bias - tee reference design value description manufacturer part number c4 , c 5 , c 7 1000pf cap, 0402 , 10 0v, 10%, x 7 r various c 6 0.01uf cap, 1206, 100v, 10%, x 7 r various l1 330nh ind , 1206, 100v, 10%, x 7 r various r 3 10? res, 0402 various
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 14 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing & bond pad description unit: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size description 1 rf in 0.1 98 x 0.19 8 rf input; dc block is required. 2 v g 0.100 x 0. 100 gate voltage , b ias network is required; s ee application circuit on page s 10 and 12 as an example. 3 rf out / v d 0.1 9 8 x 0. 198 ou tput; drain voltage , b ias network is required; s e e application circuit on page s 10 and 12 as an example. 2 3 1
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 15 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn ( 8 0/ 2 0) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process as sembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga2237 0.03 C 2.5 ghz 10w gan power amplifier preliminary datasheet: rev - 02 - 21 - 14 - 16 of 16 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halo gen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : ear99

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